Pulse gate drive transformer with double secondary winding
Galvanic separation of drive and power circuit
Voltage resistance up to 4kV
Ignition current up to 1A
Turns ratio up to 3:1:1
Technical specifications
Nominal operating voltage:up to 500V
Operating frequency:40kHz max.
500kHz max. for data transmission
Ignition currents:0.1 to 1A @ 40¡ãC
Rise time:0.4 to 4.0¦Ìs
Test voltage:Up/50Hz/2s max. according to VDE 110b
Max. partial discharge voltage:??? 1.5 x Unom
Temperature range (operation and storage):
-25¡ãC to +70¡ãC (25/70/21)
Flammability corresponding to: UL 94V-0 listed materials
GT18 series pulse transformers are designed to offer you galvanic isolation for transformer coupled gate drives. The GT18 series provides negligible delays and the possibility of voltage scaling. They are available with single or double secondary winding for multiple gate drives. Choosing the SHINHOM product line brings you the rapid availability of a standard gate drive transformer. A wide selection on turns ratio, ignition current and voltages are designed compatible with IT245, 246 ,248 ,255, 258, 260,243,244,249,253,242
Features and benefits
Galvanic separation with secondary winding.
Voltage resistance up to 4kV.
Allows high potential difference voltage scaling.
Vacuum potting.
Very low partial discharge effects.
PCB through hole mounting.
Low leakage inductance, wich allows high steepness and short rise time of the wave form;
Low coupling capacitance, so that a good decoupling and immunity to interferences is reached;
Small size, achivied with the use of toroidal core or EE ferrite cores
High primary to secondary withstanding voltage by means of a proper wires insulation and rosin filling;
International standards compliance.
Custom-specific versions on request.
Typical applications
Gate drive circuit
Power supplies
Power converters
Frequency converters
Switching applications
DC/DC converters
Line coupling transformers in high-speed? data transmission
Firing thyristors and triacs
Driving bipolar transistor and IGBT
Driving FET and MOSFET transistors
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